| PART |
Description |
Maker |
| TAJA106M006RNJ TAJT106K010RNJ TAJD336M010RNJ |
Marking
TAJ, TRJ, THJ, TAW, TPS, TPM, NOJ, NOS, NOM, NPV, TAC, TPC, TCJ and TLJ
For TAJ, TPS & THJ, the positive end of body has videcon readable polarity marking as shown in the diagram.
|
AVX Corporation
|
| ML9XX31 ML9SM31 ML9SM31-01-00 ML9SM31-01-01 ML9SM3 |
1536 nm, LASER DIODE
1553 nm, LASER DIODE
1558 nm, LASER DIODE
1544 nm, LASER DIODE
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管EA调制
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管与EA调制
1549 nm, LASER DIODE
|
Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| Q62702-P358 Q62702-P1617 SPL_CG SPLCG85 SPLCG98 SP |
Laser Diode on Submount 1.0 W cw Class 4 Laser Product 850 nm, LASER DIODE
Laser Diode on Submount 1.0 W cw Class 4 Laser Product 激光二极管W连续类激光产品的Submount 1.0
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SPLBG98 SPLBW81 SPLBS94 SPLBX83 SPLBX98 SPLBX94 SP |
Unmounted Laser Bar 40 W, 980 nm
Unmounted Laser Bar 20 W, 808 nm
Unmounted Laser Bar 100 W, qcw
Unmounted Laser Bar 30 W, 830 nm
Unmounted Laser Bar 30 W, 980 nm
Unmounted Laser Bar 30 W, 940 nm
Unmounted Laser Bar 30 W, 808 nm
|
Infineon
|
| AOTF3N90L |
PACKAGE MARKING DESCRIPTION
|
Alpha & Omega Semiconductors
|
| VT5376V032 |
Ultra-low power laser motion sensor for laser mouse applications
|
STMicroelectronics
|
| ML725J16F ML7XX1602 ML725B16F ML720J16S |
MITSUBISHI LASER DIODES 2.5Gbps InGaAsP DFB LASER DIODE
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| ADL-66505TL |
High power laser modules industrial laser markers / measuring instruments Medical application
|
Roithner LaserTechnik G...
|
| AOI530L |
TO251A PACKAGE MARKING DESCRIPTION
|
Alpha & Omega Semiconductors
|
| AOV20S60 |
DFN8X8 PACKAGE MARKING DESCRIPTION
|
Alpha & Omega Semiconductors
|
| PG-TO251-3-21 |
Package Outline / Marking Layout
|
Infineon
|
